Influence of Contacts and Applied Voltage on a Structure of a Single GaN Nanowire

Semiconductor nanowires (NWs) have a broad range of applications for nano- and optoelectronics. The strain field gallium nitride (GaN) NWs could be significantly changed when contacts are applied to them form final device, especially considering the piezoelectric properties GaN. Investigation influence metallic on structure is high importance their in real devices. We studied series different type voltage bias contacted GaN with length about 3 4 micrometers two diameters 200 nm 350 nm. It was demonstrated that diameter bend already by interaction substrate. For all NWs, significant structural changes were revealed after deposition. results our research may contribute future optoelectronic nanowires.